Gallium Nitride (GaN)
A wide bandgap semiconductor enabling ultra-compact, high-frequency power conversion in EV charging and power electronics applications.
Overview
Gallium Nitride (GaN) is a wide bandgap semiconductor (3.4 eV) with superior electron mobility and high-frequency switching capability compared to silicon. GaN-on-silicon and GaN-on-SiC devices enable power converters to operate at megahertz switching frequencies, dramatically reducing the size and weight of passive components (inductors, capacitors) in power electronics systems. In automotive applications, GaN is used in compact onboard chargers (OBC), DC/DC converters, wireless charging systems, and in-vehicle power supplies. GaN devices offer lower conduction and switching losses at 650V ratings compared to silicon, and are key to achieving ultra-compact Level 2 charging systems.
Automotive Applications
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Properties
Category
Type
Wide Bandgap Semiconductor
Available Colors
Available Forms
Key Properties
- Wide bandgap (3.4 eV)
- Very high switching frequency
- Low on-resistance
- Compact device size
- High electron mobility
- Excellent thermal properties
Technical Specifications
Density
6.15 g/cm³
Temperature Resistance
Up to 300°C (material); 150°C+ junction temp for devices
Sustainability
Sustainability Rating
GaN devices enable more compact and efficient charging systems, reducing charger mass and energy losses. Gallium is a critical material recovered primarily as a by-product of aluminium refining.