Silicon Carbide (SiC)
A wide bandgap semiconductor material enabling high-efficiency, high-voltage, and high-temperature power electronics for EV inverters and charging systems.
Overview
Silicon Carbide (SiC) is a wide bandgap (WBG) semiconductor with a bandgap of 3.26 eV versus 1.1 eV for silicon, enabling operation at higher voltages (up to 10 kV), higher temperatures (>200°C), and higher switching frequencies than silicon devices. In electric vehicles, SiC MOSFETs are revolutionising the traction inverter, reducing switching losses by up to 50% compared to silicon IGBTs, enabling smaller, lighter inverter designs and extending EV range. SiC is also used in onboard chargers (OBC) and DC/DC converters. Tesla, Toyota, and virtually all major EV manufacturers are adopting SiC-based inverters. Global SiC supply is a strategic issue given the market's rapid growth.
Automotive Applications
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Properties
Category
Type
Wide Bandgap Semiconductor
Available Colors
Available Forms
Key Properties
- Wide bandgap (3.26 eV)
- High breakdown voltage
- High thermal conductivity
- High switching frequency
- Low on-resistance
- Operates at 200°C+
Technical Specifications
Density
3.21 g/cm³
Temperature Resistance
Up to 600°C (bulk material); 200°C+ junction temp for devices
Sustainability
Sustainability Rating
SiC inverters improve EV efficiency by 5–10%, directly reducing energy consumption. High wafer production energy is offset by lifecycle efficiency gains.